ROHM SiC N-Channel MOSFET, 55 A, 1200 V, 4-Pin TO-247 SCT3040KRC14

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
191-8762
Référence fabricant:
SCT3040KRC14
Fabricant:
ROHM
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Marque

ROHM

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

262 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

107 nC @ 18V

SCT3040KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver source terminal is improving high-speed switching performance.

Low on-resistance
Fast switching speed
Fast reverse recovery
Easy to parallel
Simple to drive
Pb-free lead plating
High efficiency 4pin package
Evaluation board 'P02SCT3040KR-EVK-001'
Application
Solar inverters
DC/DC converters
Switch mode power supplies
Induction heating
Motor drives

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