Microchip Half Bridge Phase Leg SiC MOSFET N channel-Channel MOSFET Modules, 266 A, 1200 V Enhancement
- N° de stock RS:
- 931-018
- Référence fabricant:
- MSCSMC120AM04TBZ2AEG
- Fabricant:
- Microchip
Sous-total (1 unité)*
128,81 €
(TVA exclue)
155,86 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Expédition à partir du 27 avril 2027
Unité | Prix par unité |
|---|---|
| 1 + | 128,81 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 931-018
- Référence fabricant:
- MSCSMC120AM04TBZ2AEG
- Fabricant:
- Microchip
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | N channel | |
| Product Type | MOSFET Modules | |
| Maximum Continuous Drain Current Id | 266A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | Phase Leg SiC MOSFET | |
| Mount Type | Direct Mount | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 4.7V | |
| Maximum Power Dissipation Pd | 766W | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Typical Gate Charge Qg @ Vgs | 726nC | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type N channel | ||
Product Type MOSFET Modules | ||
Maximum Continuous Drain Current Id 266A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series Phase Leg SiC MOSFET | ||
Mount Type Direct Mount | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 4.7V | ||
Maximum Power Dissipation Pd 766W | ||
Maximum Gate Source Voltage Vgs 23V | ||
Typical Gate Charge Qg @ Vgs 726nC | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
