IXYS HiperFET, Q3-Class N-Channel MOSFET, 15 A, 1000 V, 3-Pin TO-247 IXFH15N100Q3

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
801-1389
Numéro d'article Distrelec:
302-53-309
Référence fabricant:
IXFH15N100Q3
Fabricant:
IXYS
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Marque

IXYS

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

1000 V

Series

HiperFET, Q3-Class

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

690 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

16.26mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

5.3mm

Height

16.26mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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