IXYS Q3-Class Type N-Channel Power MOSFET, 18 A, 1000 V Enhancement, 3-Pin TO-268 IXFT18N100Q3

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N° de stock RS:
168-4712
Référence fabricant:
IXFT18N100Q3
Fabricant:
IXYS
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Marque

IXYS

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

1000V

Package Type

TO-268

Series

Q3-Class

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

660mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

830W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

90nC

Maximum Operating Temperature

150°C

Height

5.1mm

Width

14 mm

Length

16.05mm

Standards/Approvals

No

Automotive Standard

No

Pays d'origine :
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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