onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23

Sous-total (1 bobine de 3000 unités)*

537,00 €

(TVA exclue)

651,00 €

(TVA incluse)

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  • Expédition à partir du 21 avril 2026
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Unité
Prix par unité
la bobine*
3000 +0,179 €537,00 €

*Prix donné à titre indicatif

N° de stock RS:
124-1309
Référence fabricant:
FDC6333C
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

PowerTrench

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

220mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.7nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

960mW

Forward Voltage Vf

0.8V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Length

3mm

Width

1.7 mm

Height

1mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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