Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
- N° de stock RS:
- 236-4398
- Référence fabricant:
- BSS126IXTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
2,02 €
(TVA exclue)
2,44 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,202 € | 2,02 € |
| 100 - 240 | 0,191 € | 1,91 € |
| 250 - 490 | 0,182 € | 1,82 € |
| 500 - 990 | 0,176 € | 1,76 € |
| 1000 + | 0,142 € | 1,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 236-4398
- Référence fabricant:
- BSS126IXTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS® | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS® | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon SIPMOS® Series MOSFET, 600V Maximum Drain Source Voltage, 0.5W Maximum Power Dissipation - BSS126IXTSA1
This MOSFET is a small-signal, N-channel depletion-mode transistor designed for surface-mounted electronics requiring high-voltage switching in Compact footprints. It operates across a wide temperature range and is intended for low-current applications where a depletion-mode device is preferred to provide normally-on behaviour and simplified gate control.
Features and Benefits:
• Maximum drain-source voltage 600 V enables high-voltage switching
• Maximum continuous drain current 21 mA supports low-power circuits
• Maximum drain-source resistance 700 Ω limits on-state conduction
• Forward voltage 1.2 V reduces voltage drop in driven paths
• Typical gate charge 1.4 nC allows modest gate-drive energy
• Maximum power dissipation 0.5 W suits low-power thermal budgets
• Maximum continuous drain current 21 mA supports low-power circuits
• Maximum drain-source resistance 700 Ω limits on-state conduction
• Forward voltage 1.2 V reduces voltage drop in driven paths
• Typical gate charge 1.4 nC allows modest gate-drive energy
• Maximum power dissipation 0.5 W suits low-power thermal budgets
Applications
• Suitable for high-voltage biasing networks in analogue designs
• Ideal for low-current protection circuits and bleeder resistors
• Used with small-signal drivers requiring depletion-mode behaviour
• Can be used for current steering in sensor front-ends
• Appropriate for Compact power-management subcircuits in converters
• Ideal for low-current protection circuits and bleeder resistors
• Used with small-signal drivers requiring depletion-mode behaviour
• Can be used for current steering in sensor front-ends
• Appropriate for Compact power-management subcircuits in converters
What gate voltage range can be applied safely?
A gate-to-source potential up to 20 V is permissible for normal operation.
What thermal range will the device tolerate during use?
It is rated to function between −55 °C and 150 °C for varied environments.
How is the component packaged for PCB assembly?
It is supplied in a SOT-23 surface-mount package suitable for automated placement.
What mechanical envelope should be allowed on the PCB footprint?
The package measures approximately 3 mm length, 1.4 mm width and 1.1 mm height for land-pattern planning.
Does the device meet automotive-grade classification?
It is not specified as an automotive-standard component and should not be assumed to meet those criteria.
Liens connexes
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