Infineon SIPMOS N-Channel MOSFET, 660 mA, 200 V Depletion, 4-Pin SOT-223 BSP149H6327XTSA1
- N° de stock RS:
- 354-5720
- Numéro d'article Distrelec:
- 302-83-878
- Référence fabricant:
- BSP149H6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
1,67 €
(TVA exclue)
2,02 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 101 unité(s) expédiée(s) à partir du 11 décembre 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,67 € |
| 10 - 49 | 1,57 € |
| 50 - 99 | 1,51 € |
| 100 - 249 | 1,45 € |
| 250 + | 1,34 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 354-5720
- Numéro d'article Distrelec:
- 302-83-878
- Référence fabricant:
- BSP149H6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 660mA | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.5mm | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 660mA | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.5mm | ||
Height 1.6mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP149H6327XTSA1
This MOSFET is an essential component designed for a range of electronic applications, offering efficient performance within a compact surface mount package. It is well-suited for controlling automation circuits and is relevant for users in the electronics, electrical, and mechanical sectors. The depletion mode characteristic enhances control for switching applications, making it a suitable choice for engineers.
Features & Benefits
• Maximum drain-source voltage of 200V for high voltage applications
• Continuous drain current capability of up to 660mA
• Utilises SIPMOS technology for consistent performance
• RoHS compliant with Pb-free lead plating
• dv/dt rated for improved resilience against voltage variations
Applications
• Driver in automation systems
• Switching power supplies for energy management
• Automotive electronics compliant with AEC-Q101 standards
What is the significance of the depletion mode characteristic?
The depletion mode allows for efficient control of the MOSFET, which enables effective switching even at lower voltages, beneficial in diverse electronic designs.
How does the device manage thermal challenges?
It functions within a broad temperature range of -55°C to +150°C, ensuring dependable performance even under extreme thermal conditions, supported by its effective thermal management capabilities.
What are the gate threshold voltage values for this component?
The gate threshold voltage ranges from -2.1V to -1V, providing versatile switching options for different circuit requirements.
What are the implications of the ESD Class rating?
The ESD Class rating of 1B indicates a design that can withstand electrostatic discharge levels between 500V and 600V, enhancing the device's reliability in sensitive applications.
Liens connexes
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