Infineon HEXFET Type N-Channel MOSFET, 200 A, 40 V Enhancement, 3-Pin TO-220 IRL1404ZPBF

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Sous-total (1 paquet de 2 unités)*

4,35 €

(TVA exclue)

5,264 €

(TVA incluse)

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Dernier stock RS
  • 42 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
  • 152 unité(s) finale(s) expédiée(s) à partir du 02 janvier 2026
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Prix par unité
le paquet*
2 - 182,175 €4,35 €
20 - 481,915 €3,83 €
50 - 981,785 €3,57 €
100 - 1981,65 €3,30 €
200 +1,545 €3,09 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
688-7178
Référence fabricant:
IRL1404ZPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

230W

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

75nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

8.77mm

Width

4.4 mm

Length

10.66mm

Automotive Standard

No

Statut RoHS : Exempté

Infineon HEXFET Series MOSFET, 200A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRL1404ZPBF


This MOSFET is engineered for high-efficiency performance across various applications, particularly within automation, electronics, and electrical engineering. It ensures dependable operation in extreme conditions, which is Crucial for Advanced electronic systems. Its robust design makes it a preferred option for engineers seeking to optimise power management solutions.

Features & Benefits


• Capable of handling continuous drain currents up to 200A

• Low drain-source on-resistance enhances efficiency

• Suitable for high switching speeds to reduce energy losses

• Operates within a wide temperature range from -55°C to +175°C

• Offers a maximum gate threshold voltage of 2.7V for compatibility

• Designed in a through-hole TO-220 package for simple mounting

Applications


• Used in power amplifiers and converters

• Employed in DC-DC switching power supplies

• Integrated within motor control circuitry

• Ideal for automotive and renewable energy

What is the maximum voltage this component can handle?


It can manage a maximum drain-source voltage of 40V.

How does the gate threshold voltage affect operation?


A gate threshold voltage of 2.7V ensures efficient activation of the device, allowing for accurate control.

Can this component be used in high-temperature environments?


Yes, it is rated for operation up to +175°C, making it suitable for intense applications.

What is the significance of low drain-source resistance?


Low resistance minimises power losses, thereby enhancing overall system efficiency, especially at high current loads.

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon


Motor Control MOSFET


Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET


A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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