Infineon HEXFET Type N-Channel MOSFET, 200 A, 40 V Enhancement, 3-Pin TO-220 IRL1404ZPBF
- N° de stock RS:
- 688-7178
- Référence fabricant:
- IRL1404ZPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
5,03 €
(TVA exclue)
6,086 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- Plus 50 unité(s) expédiée(s) à partir du 04 juin 2026
- 42 unité(s) finale(s) expédiée(s) à partir du 11 juin 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 2,515 € | 5,03 € |
| 20 - 48 | 2,22 € | 4,44 € |
| 50 - 98 | 2,065 € | 4,13 € |
| 100 - 198 | 1,90 € | 3,80 € |
| 200 + | 1,79 € | 3,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 688-7178
- Référence fabricant:
- IRL1404ZPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Length | 10.66mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Length 10.66mm | ||
Automotive Standard No | ||
Statut RoHS : Exempté
Infineon HEXFET Series MOSFET, 200A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRL1404ZPBF
This MOSFET is engineered for high-efficiency performance across various applications, particularly within automation, electronics, and electrical engineering. It ensures dependable operation in extreme conditions, which is Crucial for Advanced electronic systems. Its robust design makes it a preferred option for engineers seeking to optimise power management solutions.
Features & Benefits
• Capable of handling continuous drain currents up to 200A
• Low drain-source on-resistance enhances efficiency
• Suitable for high switching speeds to reduce energy losses
• Operates within a wide temperature range from -55°C to +175°C
• Offers a maximum gate threshold voltage of 2.7V for compatibility
• Designed in a through-hole TO-220 package for simple mounting
Applications
• Used in power amplifiers and converters
• Employed in DC-DC switching power supplies
• Integrated within motor control circuitry
• Ideal for automotive and renewable energy
What is the maximum voltage this component can handle?
It can manage a maximum drain-source voltage of 40V.
How does the gate threshold voltage affect operation?
A gate threshold voltage of 2.7V ensures efficient activation of the device, allowing for accurate control.
Can this component be used in high-temperature environments?
Yes, it is rated for operation up to +175°C, making it suitable for intense applications.
What is the significance of low drain-source resistance?
Low resistance minimises power losses, thereby enhancing overall system efficiency, especially at high current loads.
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Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
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