Infineon HEXFET N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 913-3932
- Référence fabricant:
- IRFB4227PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
54,55 €
(TVA exclue)
66,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 950 unité(s) expédiée(s) à partir du 27 mai 2027
- Plus 1 000 unité(s) expédiée(s) à partir du 07 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,091 € | 54,55 € |
| 100 - 200 | 1,003 € | 50,15 € |
| 250 + | 0,949 € | 47,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 913-3932
- Référence fabricant:
- IRFB4227PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 330W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.66mm | |
| Width | 4.82mm | |
| Height | 9.02mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 330W | ||
Maximum Operating Temperature 175°C | ||
Length 10.66mm | ||
Width 4.82mm | ||
Height 9.02mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 200V Maximum Drain-Source Voltage, 65A Maximum Continuous Drain Current - IRFB4227PBF
This MOSFET is a high-current N-channel enhancement device designed for power switching and control in demanding electronic systems. It operates across a wide temperature range and is supplied in a through-hole TO-220 package suitable for conventional board mounting. The device meets RoHS requirements and is intended for applications requiring substantial continuous current handling and thermal resilience.
Features and Benefits:
• 24mΩ low Rds(on) gives reduced conduction losses
• 330W power dissipation enables sustained thermal load handling
• 70nC gate charge allows Faster switching transitions
• 30V gate tolerance supports robust gate-drive margins
• -40°C to 175°C rating sustains wide operating environments
• 330W power dissipation enables sustained thermal load handling
• 70nC gate charge allows Faster switching transitions
• 30V gate tolerance supports robust gate-drive margins
• -40°C to 175°C rating sustains wide operating environments
Applications
• Suitable for high-current DC motor controllers
• Ideal for switch-mode power supplies and converters
• Used with battery management and power distribution systems
• Can be used for industrial inverter stages
• Suitable for general-purpose power switching on through-hole boards
• Ideal for switch-mode power supplies and converters
• Used with battery management and power distribution systems
• Can be used for industrial inverter stages
• Suitable for general-purpose power switching on through-hole boards
What is the device’s package and mounting style?
It is supplied in a TO-220 package and intended for through-hole mounting.
What operating temperature extremes can it withstand?
It is rated to operate from -40°C up to 175°C.
How does the device address regulatory material restrictions?
It conforms to RoHS standards limiting hazardous substances.
What is the channel type and conduction mode?
It is an N-channel device operating in enhancement mode.
What are the gate and drain voltage limits?
The gate is rated to ±30V and the drain-to-source maximum is 200V.
Liens connexes
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFB4227PBF
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- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
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