Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220 IRFB5620PBF
- N° de stock RS:
- 124-9009
- Référence fabricant:
- IRFB5620PBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
54,25 €
(TVA exclue)
65,65 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,085 € | 54,25 € |
| 100 - 200 | 0,879 € | 43,95 € |
| 250 - 450 | 0,824 € | 41,20 € |
| 500 - 950 | 0,77 € | 38,50 € |
| 1000 + | 0,719 € | 35,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-9009
- Référence fabricant:
- IRFB5620PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 14W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 14W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MX
Digital Audio MOSFET, Infineon
Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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