Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 688-6973
- Référence fabricant:
- IRFB5620PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
4,70 €
(TVA exclue)
5,68 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 4 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 1 350 unité(s) expédiée(s) à partir du 13 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 2,35 € | 4,70 € |
| 20 - 48 | 2,03 € | 4,06 € |
| 50 - 98 | 1,885 € | 3,77 € |
| 100 - 198 | 1,765 € | 3,53 € |
| 200 + | 1,62 € | 3,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 688-6973
- Référence fabricant:
- IRFB5620PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 14W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 14W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 200V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - IRFB5620PBF
This MOSFET is a high-voltage, N-channel semiconductor switch designed for through-hole power applications. It operates as an enhancement-mode device suitable for switching and amplification tasks in demanding environments, and it is housed in a TO-220 package for straightforward mounting and heat-sinking.
Features and Benefits:
• 200V drain voltage supports high-voltage switching
• 25A continuous drain current enables robust load handling
• 73mΩ Rds(on) reduces conduction losses in power circuits
• 25nC gate charge allows controlled switching speeds
• 14W power dissipation permits moderate thermal loading
• Gate tolerance to 20V protects against overdrive events
• 25A continuous drain current enables robust load handling
• 73mΩ Rds(on) reduces conduction losses in power circuits
• 25nC gate charge allows controlled switching speeds
• 14W power dissipation permits moderate thermal loading
• Gate tolerance to 20V protects against overdrive events
Applications
• Suitable for high-voltage motor driver stages
• Ideal for switch-mode power supplies in industrial equipment
• Used for inverter-leg switching in power conversion
• Can be used for audio amplifier output stages
• Appropriate for general-purpose power switching on through-hole boards
• Ideal for switch-mode power supplies in industrial equipment
• Used for inverter-leg switching in power conversion
• Can be used for audio amplifier output stages
• Appropriate for general-purpose power switching on through-hole boards
What temperature extremes can it tolerate during operation?
It is specified to operate from -55°C up to 175°C, enabling use across extended thermal ranges.
How does the package affect mounting and thermal management?
The TO-220 through-hole package simplifies attachment to heatsinks and printed circuit boards for effective heat dissipation.
What gate voltage limits should be observed when driving it?
The maximum gate-to-source voltage rating is 20V, so gate drivers should remain within this threshold.
How does its channel type influence circuit design?
As an N-channel enhancement-mode device, it requires a positive gate-source voltage to conduct, which suits low-side and high-side switch topologies when driven appropriately.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFB5620PBF
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- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
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