Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin IPAK
- N° de stock RS:
- 688-7134
- Référence fabricant:
- IRFU3607PBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
8,97 €
(TVA exclue)
10,855 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 25 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 4 475 unité(s) expédiée(s) à partir du 06 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,794 € | 8,97 € |
| 50 - 120 | 1,634 € | 8,17 € |
| 125 - 245 | 1,526 € | 7,63 € |
| 250 - 495 | 1,42 € | 7,10 € |
| 500 + | 1,312 € | 6,56 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 688-7134
- Référence fabricant:
- IRFU3607PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | IPAK | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 140W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 2.39 mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-43-455 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type IPAK | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 140W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 2.39 mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-43-455 | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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