Infineon HEXFET N-Channel MOSFET, 9.4 A, 100 V Enhancement, 3-Pin IPAK
- N° de stock RS:
- 541-1613
- Numéro d'article Distrelec:
- 303-41-373
- Référence fabricant:
- IRFU120NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
1,02 €
(TVA exclue)
1,23 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 3 unité(s) expédiée(s) à partir du 21 septembre 2026
- Plus 22 unité(s) expédiée(s) à partir du 21 septembre 2026
- Plus 3 933 unité(s) expédiée(s) à partir du 28 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 24 | 1,02 € |
| 25 - 49 | 0,98 € |
| 50 - 99 | 0,94 € |
| 100 - 249 | 0,87 € |
| 250 + | 0,82 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 541-1613
- Numéro d'article Distrelec:
- 303-41-373
- Référence fabricant:
- IRFU120NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | IPAK | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.1mm | |
| Length | 6.6mm | |
| Width | 2.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type IPAK | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Height 6.1mm | ||
Length 6.6mm | ||
Width 2.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 9.4A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRFU120NPBF
This N-channel MOSFET is designed for high-performance applications in the electronics and electrical sectors. With a maximum continuous drain current of 9.4A and a drain-source voltage of 100V, this device offers reliable functionality across various systems. Packaged in an IPAK TO-251 casing, the MOSFET provides a compact solution for efficient power handling.
Features & Benefits
• Designed for enhancement mode operation, offering reliable switching
• High power dissipation capability of 48W enhances performance
• Ideal for high current applications in robust electronic designs
• Single Si MOSFET configuration ensures simplified integration
Applications
• Used in power management solutions for automation systems
• Used in motor control circuits for industrial machinery
• Utilised in power converters for renewable energy systems
• Suitable for consumer electronics requiring reliable power delivery
• Integral to motor drives in electrical and mechanical
What is the significance of the low Rds(on) value?
The low Rds(on) value of 210mΩ ensures minimal on-state resistance, leading to improved efficiency and reduced heat generation during operation. This characteristic is particularly important in high-frequency applications where power loss can be substantial.
How does the MOSFET perform under extreme temperatures?
With a maximum operating temperature of +175°C and a minimum of -55°C, this device is engineered to maintain consistent performance in demanding environments. This resilience makes it suitable for a wide variety of applications where temperature fluctuations are common.
What benefits does the enhancement mode provide for circuit designers?
Enhancement mode allows the transistor to be normally off, which enhances circuit stability and prevents unwanted current flow during non-active periods. This feature provides designers with increased control over system power management.
Can this MOSFET be used in high power applications?
Yes, with a power dissipation capability of 48W and a maximum continuous drain current of 9.4A, this MOSFET is well-suited for high power applications. Its robustness ensures reliability in demanding electrical environments.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin IPAK IRFU120NPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin IPAK IRLU8743PBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin IPAK IRFU024NPBF