Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin IPAK IRFU3607PBF
- N° de stock RS:
- 165-7585
- Référence fabricant:
- IRFU3607PBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 75 unités)*
74,025 €
(TVA exclue)
89,55 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 4 425 unité(s) expédiée(s) à partir du 30 décembre 2025
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Unité | Prix par unité | le tube* |
|---|---|---|
| 75 - 75 | 0,987 € | 74,03 € |
| 150 - 300 | 0,80 € | 60,00 € |
| 375 - 675 | 0,741 € | 55,58 € |
| 750 - 1425 | 0,691 € | 51,83 € |
| 1500 + | 0,642 € | 48,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-7585
- Référence fabricant:
- IRFU3607PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | IPAK | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 140W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.39 mm | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type IPAK | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 140W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 2.39 mm | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MX
N-Channel Power MOSFET 60V to 80V, Infineon
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