Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRFB4020PBF
- N° de stock RS:
- 688-6939
- Numéro d'article Distrelec:
- 304-43-452
- Référence fabricant:
- IRFB4020PBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
7,32 €
(TVA exclue)
8,855 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 795 unité(s) expédiée(s) à partir du 25 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,464 € | 7,32 € |
| 50 - 120 | 1,318 € | 6,59 € |
| 125 - 245 | 1,228 € | 6,14 € |
| 250 - 495 | 1,142 € | 5,71 € |
| 500 + | 1,068 € | 5,34 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 688-6939
- Numéro d'article Distrelec:
- 304-43-452
- Référence fabricant:
- IRFB4020PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.82 mm | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Length | 10.66mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 4.82 mm | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Length 10.66mm | ||
Automotive Standard No | ||
Digital Audio MOSFET, Infineon
Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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