onsemi QFET Type P-Channel MOSFET, 22 A, 100 V Enhancement, 3-Pin TO-263 FQB22P10TM
- N° de stock RS:
- 671-0879
- Référence fabricant:
- FQB22P10TM
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
12,54 €
(TVA exclue)
15,175 €
(TVA incluse)
Ajouter 30 unités pour bénéficier d'une livraison gratuite
Pénurie d'approvisionnement
- 20 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 1 200 unité(s) expédiée(s) à partir du 24 février 2026
Notre stock actuel est limité et nos fournisseurs s'attendent à des pénuries.
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,508 € | 12,54 € |
| 50 - 95 | 2,162 € | 10,81 € |
| 100 - 495 | 1,874 € | 9,37 € |
| 500 + | 1,646 € | 8,23 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-0879
- Référence fabricant:
- FQB22P10TM
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | QFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.75W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Forward Voltage Vf | -4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series QFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.75W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Forward Voltage Vf -4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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