onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement, 3-Pin TO-263

Sous-total (1 bobine de 800 unités)*

699,20 €

(TVA exclue)

846,40 €

(TVA incluse)

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Commandes ci-dessous 75,00 € coût (TVA exclue) 5,95 €.
Temporairement en rupture de stock
  • 800 unité(s) expédiée(s) à partir du 01 avril 2026
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Unité
Prix par unité
la bobine*
800 +0,874 €699,20 €

*Prix donné à titre indicatif

N° de stock RS:
166-2528
Référence fabricant:
FQB12P20TM
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.5A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

QFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

470mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

31nC

Maximum Power Dissipation Pd

3.13W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-5V

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

No

Height

4.83mm

Width

9.65 mm

Automotive Standard

No

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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