onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement, 3-Pin TO-263 FQB12P20TM
- N° de stock RS:
- 671-0860
- Référence fabricant:
- FQB12P20TM
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
12,11 €
(TVA exclue)
14,655 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 5 unité(s) expédiée(s) à partir du 05 janvier 2026
- Plus 245 unité(s) expédiée(s) à partir du 12 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,422 € | 12,11 € |
| 50 - 95 | 2,088 € | 10,44 € |
| 100 - 495 | 1,81 € | 9,05 € |
| 500 + | 1,592 € | 7,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-0860
- Référence fabricant:
- FQB12P20TM
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | QFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 470mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.13W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | -5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series QFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 470mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.13W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf -5V | ||
Maximum Operating Temperature 150°C | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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- Vishay P-Channel MOSFET 200 V, 3-Pin D2PAK IRF9630SPBF
- onsemi P-Channel MOSFET 100 V, 3-Pin D2PAK FQB34P10TM
- onsemi P-Channel MOSFET 60 V, 3-Pin D2PAK FQB27P06TM
