onsemi QFET Type P-Channel MOSFET, 22 A, 100 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 166-1751
- Référence fabricant:
- FQB22P10TM
- Fabricant:
- onsemi
Sous-total (1 bobine de 800 unités)*
648,00 €
(TVA exclue)
784,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Pénurie d'approvisionnement
- Plus 800 unité(s) expédiée(s) à partir du 05 janvier 2026
Notre stock actuel est limité et nos fournisseurs s'attendent à des pénuries.
Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 + | 0,81 € | 648,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 166-1751
- Référence fabricant:
- FQB22P10TM
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | QFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.75W | |
| Forward Voltage Vf | -4V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series QFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.75W | ||
Forward Voltage Vf -4V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi P-Channel MOSFET 100 V, 3-Pin D2PAK FQB22P10TM
- onsemi P-Channel MOSFET 100 V, 3-Pin D2PAK FQB34P10TM
- onsemi P-Channel MOSFET 75 V, 3-Pin D2PAK SMP3003-DL-1E
- onsemi P-Channel MOSFET 60 V, 3-Pin D2PAK FQB27P06TM
- onsemi P-Channel MOSFET 200 V, 3-Pin D2PAK FQB12P20TM
- onsemi P-Channel MOSFET 60 V, 3-Pin D2PAK FQB47P06TM-AM002
- Vishay P-Channel MOSFET 100 V, 3-Pin D2PAK IRF9530SPBF
- Infineon P-Channel MOSFET 60 V, 3-Pin D2PAK IPB110P06LMATMA1