onsemi QFET Type P-Channel MOSFET, 27 A, 60 V Enhancement, 3-Pin TO-263 FQB27P06TM

Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

11,87 €

(TVA exclue)

14,365 €

(TVA incluse)

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Pénurie d'approvisionnement
En raison d'un problème d'approvisionnement, le stock est attribué au fur et à mesure de sa disponibilité. Vous pouvez commander ce produit et nous vous communiquerons une date de livraison dès que possible.
Unité
Prix par unité
le paquet*
5 - 452,374 €11,87 €
50 - 952,048 €10,24 €
100 - 4951,774 €8,87 €
500 +1,56 €7,80 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
671-0873
Référence fabricant:
FQB27P06TM
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

QFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

3.75W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

33nC

Forward Voltage Vf

-4V

Maximum Operating Temperature

175°C

Length

10.67mm

Width

9.65 mm

Height

4.83mm

Standards/Approvals

No

Automotive Standard

No

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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