Vishay SUD23N06-31 N-Channel MOSFET, 23 A, 60 V Enhancement, 3-Pin TO-252 SUD23N06-31-GE3
- N° de stock RS:
- 636-5397
- Référence fabricant:
- SUD23N06-31-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
6,72 €
(TVA exclue)
8,13 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 4 275 unité(s) expédiée(s) à partir du 21 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,344 € | 6,72 € |
| 50 - 245 | 1,142 € | 5,71 € |
| 250 - 495 | 0,944 € | 4,72 € |
| 500 - 1245 | 0,886 € | 4,43 € |
| 1250 + | 0,832 € | 4,16 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 636-5397
- Référence fabricant:
- SUD23N06-31-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SUD23N06-31 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 31.25W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | +150°C | |
| Height | 2.38mm | |
| Width | 6.22mm | |
| Standards/Approvals | RoHS | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SUD23N06-31 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 31.25W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature +150°C | ||
Height 2.38mm | ||
Width 6.22mm | ||
Standards/Approvals RoHS | ||
Length 6.73mm | ||
Automotive Standard No | ||
Vishay SUD23N06-31 Series MOSFET, 60V Maximum Drain Source Voltage, 23A Maximum Continuous Drain Current - SUD23N06-31-GE3
This n-channel enhancement MOSFET is a surface-mount power transistor designed for switching and power-management roles in electronic systems. It operates over a wide temperature range and is suitable for applications requiring moderate voltage handling and substantial continuous current capability. The device is supplied in a TO-252 package for straightforward PCB mounting and thermal interfacing.
Features and Benefits:
• 60V drain-source withstand enables medium-voltage switching applications
• 23A continuous drain current supports high-current loads
• 31mΩ low Rds(on) reduces conduction losses during operation
• 11nC typical gate charge yields faster switching with lower drive energy
• 31.25W power dissipation allows handling of significant thermal load
• 23A continuous drain current supports high-current loads
• 31mΩ low Rds(on) reduces conduction losses during operation
• 11nC typical gate charge yields faster switching with lower drive energy
• 31.25W power dissipation allows handling of significant thermal load
Applications
• Suitable for DC-DC converter switch stages
• Ideal for power distribution in motor drivers
• Used with battery-management and power-rail circuits
• Can be used for LED driver power switches
• Ideal for power distribution in motor drivers
• Used with battery-management and power-rail circuits
• Can be used for LED driver power switches
What gate voltage limits should I observe for reliable operation?
The maximum gate-source voltage is 20V, so gate drivers and bias networks must keep Vgs within that threshold to avoid damage.
How does the device perform across temperature extremes?
It is specified to operate from -55°C up to +150°C, accommodating both cold-start conditions and elevated junction temperatures in demanding environments.
What package considerations affect thermal handling on the PCB?
The TO-252 package provides a thermal path to the board
appropriate copper area and thermal vias under the mounting pad will improve heat dissipation and maintain power capability.
What pin configuration and count does it use for layout planning?
It is a three-pin device, which simplifies footprint design while supporting direct power and gate connections for compact layouts.
Liens connexes
- Vishay SUD23N06-31 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SUD23N06-31-GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD40N06-14L-GE3
- Vishay SUD50P06-15 Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SUD50P06-15-GE3
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-GE3
- Infineon IPD Type N-Channel MOSFET 650 V Enhancement TO-252
- Infineon IPD Type N-Channel MOSFET 650 V Enhancement TO-252 IPD60R280PFD7SAUMA1
- Vishay 2N7002K Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002K-T1-GE3
- Vishay Si2309CDS Type P-Channel MOSFET -60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3