Vishay SUD23N06-31 Type N-Channel MOSFET, 23 A, 60 V Enhancement, 3-Pin TO-252 SUD23N06-31-GE3
- N° de stock RS:
- 636-5397
- Référence fabricant:
- SUD23N06-31-GE3
- Fabricant:
- Vishay
Sous-total (1 paquet de 5 unités)*
6,72 €
(TVA exclue)
8,13 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 4 285 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,344 € | 6,72 € |
| 50 - 245 | 1,142 € | 5,71 € |
| 250 - 495 | 0,944 € | 4,72 € |
| 500 - 1245 | 0,886 € | 4,43 € |
| 1250 + | 0,832 € | 4,16 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 636-5397
- Référence fabricant:
- SUD23N06-31-GE3
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SUD23N06-31 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 31.25W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SUD23N06-31 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 31.25W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Width 6.22mm | ||
Length 6.73mm | ||
Height 2.38mm | ||
Automotive Standard No | ||
Vishay SUD23N06-31 Series MOSFET, 60V Maximum Drain Source Voltage, 23A Maximum Continuous Drain Current - SUD23N06-31-GE3
Features and Benefits:
• 23A continuous drain current supports high-current loads
• 31mΩ low Rds(on) reduces conduction losses during operation
• 11nC typical gate charge yields faster switching with lower drive energy
• 31.25W power dissipation allows handling of significant thermal load
Applications
• Ideal for power distribution in motor drivers
• Used with battery-management and power-rail circuits
• Can be used for LED driver power switches
What gate voltage limits should I observe for reliable operation?
How does the device perform across temperature extremes?
What package considerations affect thermal handling on the PCB?
What pin configuration and count does it use for layout planning?
Liens connexes
- Vishay SUD23N06-31 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SUD50P06-15 Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SUD50P06-15-GE3
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-GE3
- Infineon IPD Type N-Channel MOSFET 650 V Enhancement TO-252
- Infineon IPD Type N-Channel MOSFET 650 V Enhancement TO-252 IPD60R280PFD7SAUMA1
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay 2N7002K Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002K-T1-GE3
- Vishay Si2309CDS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
