Infineon IPD Type N-Channel MOSFET, 31 A, 650 V Enhancement TO-252

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Sous-total (1 bobine de 2500 unités)*

1 042,50 €

(TVA exclue)

1 262,50 €

(TVA incluse)

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  • Expédition à partir du 05 mai 2026
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Unité
Prix par unité
la bobine*
2500 +0,417 €1 042,50 €

*Prix donné à titre indicatif

N° de stock RS:
258-3853
Référence fabricant:
IPD60R280PFD7SAUMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

650V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO 252 DPAK package features RDS(on) of 280mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and industry-leading SMD package reduce PCB space and in turn the bill-of-material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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