Vishay TP0610K Type P-Channel MOSFET, 185 mA, 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-GE3
- N° de stock RS:
- 787-9018
- Référence fabricant:
- TP0610K-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
3,84 €
(TVA exclue)
4,64 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 240 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 180 | 0,192 € | 3,84 € |
| 200 - 480 | 0,181 € | 3,62 € |
| 500 - 980 | 0,163 € | 3,26 € |
| 1000 - 1980 | 0,153 € | 3,06 € |
| 2000 + | 0,144 € | 2,88 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 787-9018
- Référence fabricant:
- TP0610K-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 185mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TP0610K | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.4V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 350mW | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 185mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TP0610K | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.4V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 350mW | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Automotive Standard No | ||
Halogen-free
Definition
TrenchFET® Power MOSFET
High-Side Switching
Low On-Resistance: 6
Low Threshold: - 2 V (typ.)
Fast Swtiching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
2000 V ESD Protection
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
Liens connexes
- Vishay P-Channel MOSFET 60 V, 3-Pin SOT-23 TP0610K-T1-E3
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- Vishay P-Channel MOSFET 30 V SOT-23 SI2393DS-T1-GE3
- Vishay P-Channel MOSFET 8 V SOT-23 SI2329DS-T1-GE3
- Vishay N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002K-T1-GE3
- Vishay N-Channel MOSFET 60 V, 3-Pin SOT-23 SI2308BDS-T1-GE3
- Vishay P-Channel MOSFET 80 V, 3-Pin SOT-23 SI2337DS-T1-GE3
- Vishay P-Channel MOSFET 30 V, 3-Pin SOT-23 SI2343CDS-T1-GE3
