Vishay SUD23N06-31 Type N-Channel MOSFET, 23 A, 60 V Enhancement, 3-Pin TO-252 SUD23N06-31-GE3

N° de stock RS:: 165-2431
Référence fabricant:: SUD23N06-31-GE3
Fabricant:: Vishay

Vishay SUD23N06-31 Type N-Channel MOSFET, 23 A, 60 V Enhancement, 3-Pin TO-252 SUD23N06-31-GE3

Sous-total (1 bobine de 2000 unités)*

614,00 €

(TVA exclue)

742,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Unité	Prix par unité	la bobine*
2000 +	0,307 €	614,00 €

*Prix donné à titre indicatif

N° de stock RS:: 165-2431
Référence fabricant:: SUD23N06-31-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	SUD23N06-31
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	31mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	31.25W
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Operating Temperature	+150°C
	Length	6.73mm
	Standards/Approvals	RoHS
	Width	6.22mm
	Height	2.38mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series SUD23N06-31
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 31mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 31.25W
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Operating Temperature +150°C
	Length 6.73mm
	Standards/Approvals RoHS
	Width 6.22mm
	Height 2.38mm
	Automotive Standard No

Pays d'origine :: TW

Vishay SUD23N06-31 Series MOSFET, 60V Maximum Drain Source Voltage, 23A Maximum Continuous Drain Current - SUD23N06-31-GE3

This n-channel enhancement MOSFET is a surface-mount power transistor designed for switching and power-management roles in electronic systems. It operates over a wide temperature range and is suitable for applications requiring moderate voltage handling and substantial continuous current capability. The device is supplied in a TO-252 package for straightforward PCB mounting and thermal interfacing.

Features and Benefits:

• 60V drain-source withstand enables medium-voltage switching applications
• 23A continuous drain current supports high-current loads
• 31mΩ low Rds(on) reduces conduction losses during operation
• 11nC typical gate charge yields faster switching with lower drive energy
• 31.25W power dissipation allows handling of significant thermal load

Applications

• Suitable for DC-DC converter switch stages
• Ideal for power distribution in motor drivers
• Used with battery-management and power-rail circuits
• Can be used for LED driver power switches

What gate voltage limits should I observe for reliable operation?

The maximum gate-source voltage is 20V, so gate drivers and bias networks must keep Vgs within that threshold to avoid damage.

How does the device perform across temperature extremes?

It is specified to operate from -55°C up to +150°C, accommodating both cold-start conditions and elevated junction temperatures in demanding environments.

What package considerations affect thermal handling on the PCB?

The TO-252 package provides a thermal path to the board

appropriate copper area and thermal vias under the mounting pad will improve heat dissipation and maintain power capability.

What pin configuration and count does it use for layout planning?

It is a three-pin device, which simplifies footprint design while supporting direct power and gate connections for compact layouts.