Vishay SUD23N06-31 Type N-Channel MOSFET, 23 A, 60 V Enhancement, 3-Pin TO-252

N° de stock RS:: 165-2431
Référence fabricant:: SUD23N06-31-GE3
Fabricant:: Vishay

Vishay SUD23N06-31 Type N-Channel MOSFET, 23 A, 60 V Enhancement, 3-Pin TO-252

Sous-total (1 bobine de 2000 unités)*

614,00 €

(TVA exclue)

742,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

4 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	la bobine*
2000 +	0,307 €	614,00 €

*Prix donné à titre indicatif

N° de stock RS:: 165-2431
Référence fabricant:: SUD23N06-31-GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	SUD23N06-31
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	31mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3W
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Height	2.38mm
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series SUD23N06-31
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 31mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3W
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Height 2.38mm
	Length 6.73mm
	Standards/Approvals No
	Width 6.22mm
	Automotive Standard No

Pays d'origine :: TW

Vishay SUD23N06-31 Series MOSFET, 60V Drain Source Voltage, 23A Continuous Drain Current - SUD23N06-31-GE3

This MOSFET is a surface-mount N-channel transistor designed to switch and control power in electronic systems. It operates at voltages up to 60V and is intended for applications requiring significant continuous current handling and moderate power dissipation in a Compact TO-252 package.

Features and Benefits:

• 23 A continuous drain current for high-current switching capability
• 31 mΩ Rds(on) for reduced conduction losses and improved efficiency
• 11 nC typical gate charge for Faster switching with lower drive requirements
• 31.25W maximum power dissipation to handle thermal stress in loaded conditions
• 20V maximum gate-source voltage for robust gate-drive headroom
• -55 °C to +150 °C operating range for wide environmental tolerance

Applications

• Suitable for DC motor drivers requiring sustained high current
• Ideal for power-conversion stages in industrial automation
• Used for load switching in power-distribution assemblies
• Can be used for switch-mode power supplies in control systems

What mounting style does it use and how does that affect assembly?

It is supplied in a TO-252 surface-mount package, enabling automated soldering processes and Compact PCB layouts.

How does the device handle thermal management on a PCB?

With 31.25W maximum dissipation, it requires adequate copper area or thermal vias to spread heat from the package to the board.

What gate-drive considerations are necessary for reliable operation?

Gate drive must remain within ±20V relative to source and provide sufficient charge delivery to reach the typical 11 nC gate charge for the desired switching speed.

What electrical limits must be observed during design?

Ensure that the drain-source voltage never exceeds 60V and that continuous drain current does not surpass 23 A under the intended cooling conditions.