Vishay IRF820 Type N-Channel Power MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220AB IRF820PBF
- N° de stock RS:
- 543-0002
- Numéro d'article Distrelec:
- 301-91-570
- Référence fabricant:
- IRF820PBF
- Fabricant:
- Vishay
Sous-total (1 unité)*
1,63 €
(TVA exclue)
1,97 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 23 unité(s) prête(s) à être expédiée(s)
- Plus 126 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 418 unité(s) expédiée(s) à partir du 14 août 2026
Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,63 € |
| 10 - 49 | 1,49 € |
| 50 - 99 | 1,32 € |
| 100 - 249 | 1,21 € |
| 250 + | 1,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 543-0002
- Numéro d'article Distrelec:
- 301-91-570
- Référence fabricant:
- IRF820PBF
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF820 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF820 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Length 10.41mm | ||
Width 4.7mm | ||
Automotive Standard No | ||
Vishay IRF820 Series Power MOSFET, 500V Drain-Source Voltage, 50W Power Dissipation - IRF820PBF
Features and Benefits:
• 50W power dissipation supports sustained power handling
• 2.5A continuous drain current allows moderate load conduction
• 3Ω maximum RDS(on) reduces conduction losses under light loads
• 24nC typical gate charge permits reasonable switching speed control
• -55°C to 150°C operating range suits wide thermal environments
Applications
• Ideal for high-voltage lamp and heater controllers
• Used with discrete motor-drive front-ends for low-current motors
• Can be used for hobbyist high-voltage power supplies
• Used for laboratory bench test rigs requiring rugged through-hole parts
What package and mounting method does it use?
What gate voltage limits must be observed to avoid damage?
How does the forward voltage specification affect its use in circuits?
Is this component suitable for automotive temperature extremes?
Liens connexes
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IRF820PBF
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
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