Vishay IRF820 Type N-Channel Power MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220AB IRF820PBF
- N° de stock RS:
- 178-0851
- Référence fabricant:
- IRF820PBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
39,65 €
(TVA exclue)
48,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 400 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,793 € | 39,65 € |
| 100 - 200 | 0,673 € | 33,65 € |
| 250 + | 0,595 € | 29,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-0851
- Référence fabricant:
- IRF820PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF820 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF820 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Height 9.01mm | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Automotive Standard No | ||
Vishay IRF820 Series Power MOSFET, 500V Drain-Source Voltage, 50W Power Dissipation - IRF820PBF
This power MOSFET is a high-voltage switching transistor designed for through-hole mounting in power conversion and control circuits. It operates as an N-channel enhancement device intended to switch or amplify high-voltage loads within electronic systems while meeting RoHS requirements.
Features and Benefits:
• 500V drain-source rating enables high-voltage switching capability
• 50W power dissipation supports sustained power handling
• 2.5A continuous drain current allows moderate load conduction
• 3Ω maximum RDS(on) reduces conduction losses under light loads
• 24nC typical gate charge permits reasonable switching speed control
• -55°C to 150°C operating range suits wide thermal environments
• 50W power dissipation supports sustained power handling
• 2.5A continuous drain current allows moderate load conduction
• 3Ω maximum RDS(on) reduces conduction losses under light loads
• 24nC typical gate charge permits reasonable switching speed control
• -55°C to 150°C operating range suits wide thermal environments
Applications
• Suitable for SMPS primary-side switching stages
• Ideal for high-voltage lamp and heater controllers
• Used with discrete motor-drive front-ends for low-current motors
• Can be used for hobbyist high-voltage power supplies
• Used for laboratory bench test rigs requiring rugged through-hole parts
• Ideal for high-voltage lamp and heater controllers
• Used with discrete motor-drive front-ends for low-current motors
• Can be used for hobbyist high-voltage power supplies
• Used for laboratory bench test rigs requiring rugged through-hole parts
What package and mounting method does it use?
The device is supplied in a TO-220AB package configured for through-hole fitting with three pins for straightforward PCB attachment and heatsinking.
What gate voltage limits must be observed to avoid damage?
The gate-source voltage must not exceed 20V in either polarity to prevent gate-oxide stress and potential failure.
How does the forward voltage specification affect its use in circuits?
The specified forward voltage of 1.6V indicates the typical voltage drop when conducting under specified test conditions and should be accounted for in thermal and efficiency calculations.
Is this component suitable for automotive temperature extremes?
While it tolerates -55°C to 150°C, it is not designated to meet automotive-standard qualifications.
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