Vishay IRF510 Type N-Channel Power MOSFET, 5.6 A, 100 V Enhancement, 3-Pin TO-220AB IRF510PBF
- N° de stock RS:
- 919-0023
- Référence fabricant:
- IRF510PBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
36,20 €
(TVA exclue)
43,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 3 000 unité(s) expédiée(s) à partir du 14 août 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,724 € | 36,20 € |
| 100 - 200 | 0,615 € | 30,75 € |
| 250 + | 0,543 € | 27,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-0023
- Référence fabricant:
- IRF510PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRF510 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Maximum Power Dissipation Pd | 43W | |
| Forward Voltage Vf | 2.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRF510 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Maximum Power Dissipation Pd 43W | ||
Forward Voltage Vf 2.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay IRF510 Series Power MOSFET, 100V Maximum Drain Source Voltage, 43W Maximum Power Dissipation - IRF510PBF
This power MOSFET is a single N-channel enhancement device designed for switching and amplification tasks in through‑hole assemblies. It operates across a wide temperature span suitable for demanding environments and accepts standard gate‑drive levels to control medium‑power loads. The component is supplied in a TO‑220AB package for straightforward mounting and thermal interfacing on heatsinks.
Features and Benefits:
• 100V drain voltage supports high‑voltage switching applications
• 5.6A continuous drain current handles moderate load currents
• 540mΩ Rds(on) reduces conduction losses for efficient switching
• 43W power dissipation enables sustained power handling with cooling
• 8.3nC typical gate charge allows reasonably fast switching response
• ±20V gate tolerance accommodates common gate‑drive ranges
• 5.6A continuous drain current handles moderate load currents
• 540mΩ Rds(on) reduces conduction losses for efficient switching
• 43W power dissipation enables sustained power handling with cooling
• 8.3nC typical gate charge allows reasonably fast switching response
• ±20V gate tolerance accommodates common gate‑drive ranges
Applications
• Suitable for amplifier circuit output stages in audio designs
• Ideal for general‑purpose switching in power supplies
• Used with heatsinks for motor control and power conversion
• Can be used for educational and prototyping through‑hole projects
• Useful as a transistor replacement part in repair work
• Ideal for general‑purpose switching in power supplies
• Used with heatsinks for motor control and power conversion
• Can be used for educational and prototyping through‑hole projects
• Useful as a transistor replacement part in repair work
What ambient temperatures can the device withstand in operation?
It is specified to function from -55°C up to 175°C junction temperature for use in high‑temperature assemblies.
How many pins does the component present for PCB mounting?
The device is provided with three pins configured for through‑hole mounting in a TO‑220AB footprint.
What package form factor should I prepare a heatsink for?
The TO‑220AB enclosure offers a flat rear tab suitable for bolting to a heatsink to improve thermal dissipation.
Is the component suitable for automotive‑standard requirements?
The device is not specified to meet automotive approval standards and should not be assumed compliant for regulated vehicle use.
Liens connexes
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