Vishay IRFS9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-263 IRFS9N60APBF
- N° de stock RS:
- 542-9995
- Référence fabricant:
- IRFS9N60APBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
3,71 €
(TVA exclue)
4,49 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 612 unité(s) expédiée(s) à partir du 26 juin 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 3,71 € |
| 10 - 49 | 3,35 € |
| 50 - 99 | 3,14 € |
| 100 - 249 | 2,78 € |
| 250 + | 2,56 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 542-9995
- Référence fabricant:
- IRFS9N60APBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 9.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IRFS9N60A | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Width | 9.65mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 9.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IRFS9N60A | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Width 9.65mm | ||
Automotive Standard No | ||
Vishay IRFS9N60A Series Power MOSFET, 600V Maximum Drain Source Voltage, 9.2A Maximum Continuous Drain Current - IRFS9N60APBF
This power MOSFET is a high-voltage N-channel device designed for switching and power conversion tasks in industrial and electronic systems. It operates across a wide temperature range and is intended for surface-mount integration on power assemblies where high-voltage capability and robust thermal handling are required.
Features and Benefits:
• 600V drain withstand voltage enabling high-voltage switching
• 9.2 A continuous drain current for steady load handling
• 750 mΩ on-resistance minimises conduction losses
• 49 nC typical gate charge for predictable switching energy
• 170W power dissipation supports elevated power throughput
• 150 °C maximum junction temperature for high-temperature operation
• 9.2 A continuous drain current for steady load handling
• 750 mΩ on-resistance minimises conduction losses
• 49 nC typical gate charge for predictable switching energy
• 170W power dissipation supports elevated power throughput
• 150 °C maximum junction temperature for high-temperature operation
Applications
• Suitable for SMPS primary switch functions in power supplies
• Ideal for high-voltage inverter stages in industrial drives
• Used for switch-mode motor controllers handling elevated voltages
• Can be used for power-factor correction front-end circuits
• Ideal for high-voltage inverter stages in industrial drives
• Used for switch-mode motor controllers handling elevated voltages
• Can be used for power-factor correction front-end circuits
What mounting format does it require for assembly?
It is supplied for surface mounting in a TO-263 package with three pins to suit standard heat-sinked PCB footprints.
What gate limits must be observed to avoid damage?
The gate must not be driven beyond ±30V relative to source to prevent gate oxide overstress.
How does thermal management influence performance?
With 170W rated dissipation and a 150 °C maximum junction temperature, adequate PCB copper and heatsinking are needed to maintain junction temperature under heavy load.
What environmental specification affects materials selection?
The component conforms to RoHS requirements, influencing soldering and material choices in assembly.
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