Vishay IRFB9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-220AB IRFB9N60APBF

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Sous-total (1 unité)*

3,06 €

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3,70 €

(TVA incluse)

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  • 3 unité(s) expédiée(s) à partir du 03 juillet 2026
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Prix par unité
1 - 93,06 €
10 - 492,66 €
50 - 992,54 €
100 - 2492,39 €
250 +2,21 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
541-1922
Référence fabricant:
IRFB9N60APBF
Fabricant:
Vishay
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Marque

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9.2A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220AB

Series

IRFB9N60A

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

170W

Typical Gate Charge Qg @ Vgs

49nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Width

4.7mm

Length

10.41mm

Standards/Approvals

RoHS

Height

9.01mm

Automotive Standard

No

Vishay IRFB9N60A Series Power MOSFET, 600V Drain-Source Voltage, 9.2A Continuous Drain Current - IRFB9N60APBF


This power MOSFET is a high-voltage N-channel semiconductor device intended for switching and power-conversion roles in industrial electronics. It operates as an enhancement-mode transistor and is supplied in a through-hole TO-220AB package suitable for solder-mount applications. The device is designed for use where robust voltage handling and moderate current capability are required within equipment assemblies.

Features and Benefits:


• 600V drain rating enables high-voltage switching applications • 9.2A continuous drain current supports sustained load driving • 750mΩ Rds(on) reduces conduction losses in low-current circuits • 170W power dissipation allows substantial thermal headroom • 49nC typical gate charge at Vgs 30V facilitates predictable drive timing • Rated to 150°C maximum operating temperature tolerates elevated junction conditions

Applications


• Suitable for line-frequency switch-mode power supplies • Ideal for industrial motor drive gate stages • Used with high-voltage DC-DC converter topologies • Can be used for power braking and snubber networks • Used for lab and prototyping where through-hole mounting is preferred

What gate drive constraints should I consider for reliable switching?


Drive voltages should not exceed 30V relative to the source and gate charge of about 49nC at that level defines the required driver current and switching timing.

How does thermal management influence performance under continuous load?


With 170W Pd, heat-sinking is necessary to maintain junction temperature below the 150°C limit and to achieve the specified continuous drain current without thermal derating.

What mounting method is recommended for mechanically stable connections?


Through-hole solder mounting in the TO-220AB package provides robust mechanical and thermal contact suitable for repeated thermal cycles.

What environmental temperature range can it operate within?


It is specified for operation down to -55°C and up to 150°C, allowing use across wide ambient conditions if thermal design is appropriate.

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