Vishay IRFS9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-263 IRFS9N60APBF

N° de stock RS:: 178-0850
Référence fabricant:: IRFS9N60APBF
Fabricant:: Vishay

Vishay IRFS9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-263 IRFS9N60APBF

Sous-total (1 tube de 50 unités)*

91,80 €

(TVA exclue)

111,10 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

Plus 550 unité(s) expédiée(s) à partir du 10 août 2026

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Unité	Prix par unité	le tube*
50 +	1,836 €	91,80 €

*Prix donné à titre indicatif

N° de stock RS:: 178-0850
Référence fabricant:: IRFS9N60APBF
Fabricant:: Vishay

Spécifications

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	9.2A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	IRFS9N60A
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	750mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	170W
	Forward Voltage Vf	1.5V
	Typical Gate Charge Qg @ Vgs	49nC
	Maximum Operating Temperature	150°C
	Height	4.83mm
	Length	10.67mm
	Standards/Approvals	RoHS
	Width	9.65mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 9.2A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series IRFS9N60A
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 750mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 170W
	Forward Voltage Vf 1.5V
	Typical Gate Charge Qg @ Vgs 49nC
	Maximum Operating Temperature 150°C
	Height 4.83mm
	Length 10.67mm
	Standards/Approvals RoHS
	Width 9.65mm
	Automotive Standard No

Datasheet

Vishay IRFS9N60A Series Power MOSFET, 600V Drain Source Voltage, 9.2A Continuous Drain Current - IRFS9N60APBF

This power MOSFET is a high-voltage, N-channel switching transistor designed for surface-mount applications where robust thermal and electrical performance is required. It operates over an extended ambient range and is intended for use in power conversion, switching and high-voltage circuits that demand a combination of current handling and voltage endurance.

Features and Benefits:

• 600V drain rating enables high-voltage switching
• 9.2A continuous current capability supports moderate loads
• 750mΩ Rds(on) reduces conduction losses during operation
• 170W maximum dissipation allows significant power throughput
• 49nC typical gate charge optimises switching dynamics
• 30V gate threshold permits common gate-drive voltages

Applications

• Suitable for offline switch-mode power supplies
• Ideal for high-voltage motor drive stages
• Used for inverter and renewable energy converters
• Can be used for industrial power controllers
• Appropriate for high-voltage lighting ballast designs

What thermal extremes can it tolerate during operation?

The device is specified to function from -55°C up to 150°C, permitting use in a wide range of thermal environments.

How is the component packaged for mounting on boards?

It is supplied in a TO-263 package intended for surface mounting, facilitating heat dissipation and automated assembly.

What gate-drive voltage limits should be observed?

The maximum gate-to-source voltage is 30V, which should not be exceeded to avoid damaging the gate oxide.

Does the device use enhancement or depletion mode operation?

It is an enhancement-mode N-channel MOSFET, requiring a positive gate drive relative to source for conduction.