Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-263 IRF5305STRLPBF

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11,81 €

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14,29 €

(TVA incluse)

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Unité
Prix par unité
le paquet*
10 - 401,181 €11,81 €
50 - 900,933 €9,33 €
100 - 2400,873 €8,73 €
250 - 4900,814 €8,14 €
500 +0,756 €7,56 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
831-2834
Référence fabricant:
IRF5305STRLPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

63nC

Forward Voltage Vf

-1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Height

4.83mm

Width

9.65 mm

Automotive Standard

No

Pays d'origine :
CN

Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305STRLPBF


This P-channel MOSFET is tailored for high-efficiency applications, delivering reliability and performance. It employs enhancement mode functionality, making it versatile for various electronic circuits. With robust specifications, it serves as a suitable option for automation and power management in electrical and mechanical environments.

Features & Benefits


• Maximum continuous drain current of 31A

• Maximum drain source voltage of 55V

• Surface mount configuration for seamless integration

• Maximum power dissipation capability of 110W for efficient operation

• Enhanced thermal performance with a maximum operating temperature of +175°C

• Low on-resistance of 60mΩ for improved efficiency

Applications


• For use with motor controls

• Suitable for power supply circuits

• Electronic switching

• Energy management solutions

What is the maximum gate threshold voltage?


The maximum gate threshold voltage is 4V, providing adequate control in circuit design.

How does the MOSFET handle heat?


It features a maximum power dissipation of 110W, enabling effective heat management in demanding applications.

Is this product compatible with surface mount designs?


Yes, it comes in a D2PAK package type designed specifically for surface mount applications.

What is the minimum operating temperature for functionality?


The device operates effectively at a minimum temperature of -55°C, ensuring versatility for various environments.

How does the on-resistance impact performance?


The low maximum drain source resistance of 60mΩ contributes to higher efficiency and performance in power delivery applications.

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