Infineon HEXFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 3-Pin TO-220 IRFI540NPBF

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Sous-total (1 tube de 50 unités)*

37,50 €

(TVA exclue)

45,50 €

(TVA incluse)

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  • Plus 1 150 unité(s) expédiée(s) à partir du 29 décembre 2025
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Unité
Prix par unité
le tube*
50 - 500,75 €37,50 €
100 - 2000,644 €32,20 €
250 - 4500,628 €31,40 €
500 - 9500,611 €30,55 €
1000 +0,596 €29,80 €

*Prix donné à titre indicatif

N° de stock RS:
166-1055
Référence fabricant:
IRFI540NPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

94nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

54W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

4.83 mm

Length

10.63mm

Standards/Approvals

No

Height

8.9mm

Automotive Standard

AEC-Q101

Infineon HEXFET Series MOSFET, 20A Maximum Continuous Drain Current, 54W Maximum Power Dissipation - IRFI540NPBF


This MOSFET is developed for high-performance applications in the electronics industry, playing a crucial role in power management and providing a dependable solution for switching and amplifying electronic signals. It can manage significant voltage and current loads, ensuring efficiency in modern electronic devices.

Features & Benefits


• Continuous drain current rating up to 20A

• Voltage rating of 100V for durable performance

• Low gate threshold voltage enhances switching efficiency

• High power dissipation capability of up to 54W for durability

• N-channel enhancement mode design for a variety of applications

• Low drain-source resistance of 52 mΩ minimises energy loss

Applications


• Used in power supplies for electronic circuits

• Applicable in automotive power management systems

• Utilised in motor control systems for increased efficiency

• Important for power conversion in renewable energy systems

• Employed in automated machinery for effective control processes

What is the maximum continuous current rating for this device?


The device supports a maximum continuous drain current of 20A, accommodating various applications.

How does the gate threshold voltage affect performance?


The gate threshold voltage ranges from 2V to 4V, facilitating efficient switching at lower control voltages and enhancing performance.

Can this device operate in high-temperature environments?


Yes, it can function at temperatures reaching +175°C, ensuring performance in challenging conditions.

Is there a specific mounting type recommended for optimal performance?


It is suited for through-hole mounting, allowing secure connections and effective thermal management in different applications.

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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