Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-220 IRF5305PBF
- N° de stock RS:
- 541-1736
- Numéro d'article Distrelec:
- 303-41-281
- Référence fabricant:
- IRF5305PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
1,85 €
(TVA exclue)
2,24 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 108 unité(s) expédiée(s) à partir du 12 octobre 2026
- Plus 126 unité(s) expédiée(s) à partir du 12 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,85 € |
| 10 - 49 | 1,57 € |
| 50 - 99 | 1,48 € |
| 100 - 249 | 1,38 € |
| 250 + | 1,27 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 541-1736
- Numéro d'article Distrelec:
- 303-41-281
- Référence fabricant:
- IRF5305PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | -1.3V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.54mm | |
| Width | 4.69mm | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf -1.3V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.54mm | ||
Width 4.69mm | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRF5305PBF
This MOSFET is tailored for high-efficiency power applications, providing both flexibility and reliability. Its enhancement mode operation makes it suitable for various systems requiring controlled switching, particularly in industrial and automation environments.
Features & Benefits
• Continuous drain current capacity of 31A supports demanding applications
• Voltage rating of 55V facilitates dependable switching
• Low on-resistance of 60mΩ reduces power loss
• TO-220AB package design enhances thermal performance
• Gate-source voltage range of ±20V accommodates diverse applications
• Rapid switching optimisation boosts overall system efficiency
Applications
• Used in motor control systems for efficient operation
• Applicable in power supply circuits for stable performance
• Integrated into electronic devices requiring effective switching capabilities
• Suitable for deployment in renewable energy systems
What is the temperature range for operation?
It operates within -55°C to +175°C, making it apt for extreme conditions.
How does the package type affect performance?
The TO-220AB package provides low thermal resistance, improving cooling efficiency during operation.
Can it handle pulsed drain current applications?
Yes, it supports pulsed drain currents up to 110A, ensuring adequate performance for transient demands.
What type of transistor is this?
It is a P-channel Si MOSFET, optimised for high-efficiency applications.
Is it compatible with automated assembly processes?
Yes, the through-hole design allows for integration into automated systems and circuit boards.
Liens connexes
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRFIZ44NPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK IRFU5305PBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF5305STRLPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRFR5305TRPBF