Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-247
- N° de stock RS:
- 919-4873
- Référence fabricant:
- IRFP150NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 25 unités)*
40,325 €
(TVA exclue)
48,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 150 unité(s) expédiée(s) à partir du 24 août 2026
- Plus 800 unité(s) expédiée(s) à partir du 30 décembre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 25 | 1,613 € | 40,33 € |
| 50 - 100 | 1,533 € | 38,33 € |
| 125 - 225 | 1,468 € | 36,70 € |
| 250 - 600 | 1,404 € | 35,10 € |
| 625 + | 1,306 € | 32,65 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4873
- Référence fabricant:
- IRFP150NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 160W | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Height | 20.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 160W | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Height 20.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MX
Infineon HEXFET Series MOSFET, 42A Maximum Continuous Drain Current, 160W Maximum Power Dissipation - IRFP150NPBF
This MOSFET is designed for high-performance applications that require efficient switching. With its N-channel configuration, it effectively manages substantial power loads, making it a key component in various electronic circuits and power management systems. Its ability to function across a wide temperature range increases its adaptability in various environments.
Features & Benefits
• Maximum continuous drain current of 42A
• Maximum drain-source voltage of 100V
• Low Rds(on) of 36mΩ for enhanced efficiency
• Maximum power dissipation of 160W
• Utilises enhancement mode for improved operation
• Integrated in a TO-247AC package for straightforward mounting
Applications
• Utilised in power supply circuits for automation devices
• Suitable for motor control in industrial machinery
• Employed in renewable energy systems for effective power conversion
• Applicable for high-frequency switching in telecommunications
Can it be used in high-temperature environments?
Yes, it operates effectively at temperatures up to +175°C, permitting use in challenging conditions.
What is the maximum gate-source voltage it can handle?
The device is designed to handle a maximum gate-source voltage of -20V and +20V, providing varied options for circuit design.
How does the low Rds(on) benefit performance?
A low Rds(on) minimises power losses during operation, thus enhancing overall efficiency and thermal management.
Is it suitable for through-hole mounting?
Yes, the TO-247AC package is specifically intended for through-hole mounting applications.
What considerations should be taken during installation?
Ensure the device is adequately cooled during operation to maintain optimal performance and prevent overheating.
Liens connexes
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- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247
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- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-247