Infineon HEXFET Type N-Channel MOSFET, 50 A, 200 V Enhancement, 3-Pin TO-247

N° de stock RS:: 919-5019
Référence fabricant:: IRFP260NPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 50 A, 200 V Enhancement, 3-Pin TO-247

Offre groupée disponible

Sous-total (1 tube de 25 unités)*

87,525 €

(TVA exclue)

105,90 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

200 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
25 - 25	3,501 €	87,53 €
50 - 100	3,326 €	83,15 €
125 - 225	3,186 €	79,65 €
250 - 475	3,046 €	76,15 €
500 +	2,836 €	70,90 €

*Prix donné à titre indicatif

N° de stock RS:: 919-5019
Référence fabricant:: IRFP260NPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	234nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	300W
	Maximum Operating Temperature	175°C
	Width	5.3 mm
	Standards/Approvals	No
	Length	15.9mm
	Height	20.3mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 234nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 300W
	Maximum Operating Temperature 175°C
	Width 5.3 mm
	Standards/Approvals No
	Length 15.9mm
	Height 20.3mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 50A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFP260NPBF

This MOSFET is intended for high-power applications, delivering efficiency and reliability across various electronic systems. With its enhancement mode design and robust current handling capabilities, it plays a crucial role in optimising circuit performance while effectively managing thermal dissipation.

Features & Benefits

• Supports continuous drain currents up to 50A for strong performance

• Operates efficiently with a maximum drain-source voltage of 200V

• Enhancement mode design offers improved control and versatility

• Low Rds(on) of 40mΩ reduces energy losses

• Designed for through-hole mounting, facilitating easy installation

Applications

• Utilised in power supply circuits for managing high currents

• Suitable for automotive requiring durable electronic components

• Applied in industrial equipment for effective power control

• Commonly found in renewable energy systems to enhance efficiency

What is the maximum power dissipation for this component?

The power dissipation can reach up to 300W, ensuring efficient performance in high-load conditions.

How does the low Rds(on) benefit circuit efficiency?

The low Rds(on) of 40mΩ significantly reduces conduction losses, enhancing overall efficiency and minimising heat generation during operation.

What are the advantages of using this MOSFET in power applications?

This MOSFET provides high continuous drain current and operates effectively across a wide temperature range, making it suitable for power applications.

Is it easy to install with other components in a circuit?

The through-hole mounting type simplifies integration into various circuit designs, allowing for straightforward assembly with existing components.

How does the enhance mode design affect performance?

The enhancement mode design ensures that the device conducts only when sufficient gate voltage is applied, improving switching efficiency and reducing unwanted current flow during inactive periods.