onsemi MTP3055VL Type N-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 761-4542
- Référence fabricant:
- MTP3055VL
- Fabricant:
- onsemi
Sous-total (1 paquet de 5 unités)*
9,20 €
(TVA exclue)
11,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 30 unité(s) expédiée(s) à partir du 19 janvier 2026
- Plus 30 unité(s) expédiée(s) à partir du 19 janvier 2026
- Plus 205 unité(s) expédiée(s) à partir du 26 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 1,84 € | 9,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 761-4542
- Référence fabricant:
- MTP3055VL
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | MTP3055VL | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.8nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Power Dissipation Pd | 48W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.51mm | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series MTP3055VL | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.8nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Power Dissipation Pd 48W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 16.51mm | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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