onsemi Type N-Channel MOSFET, 70 A, 60 V Enhancement, 3-Pin TO-220

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Offre groupée disponible

Sous-total (1 tube de 50 unités)*

55,20 €

(TVA exclue)

66,80 €

(TVA incluse)

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En stock
  • 150 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité
Prix par unité
le tube*
50 - 2001,104 €55,20 €
250 - 9501,075 €53,75 €
1000 - 24501,048 €52,40 €
2500 +1,021 €51,05 €

*Prix donné à titre indicatif

N° de stock RS:
124-1664
Référence fabricant:
RFP70N06
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

14mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

120nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Length

10.67mm

Height

9.4mm

Standards/Approvals

No

Width

4.83 mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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