Vishay IRF840 Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- N° de stock RS:
- 281-6027
- Numéro d'article Distrelec:
- 171-16-205
- Référence fabricant:
- IRF840PBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 1000 unités)*
865,00 €
(TVA exclue)
1 047,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 04 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 1000 - 1000 | 0,865 € | 865,00 € |
| 2000 - 4000 | 0,816 € | 816,00 € |
| 5000 + | 0,741 € | 741,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 281-6027
- Numéro d'article Distrelec:
- 171-16-205
- Référence fabricant:
- IRF840PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Series | IRF840 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Series IRF840 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay IRF840 Series Power MOSFET, 500V Drain Source Voltage, 8A Continuous Drain Current - IRF840PBF
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-handling roles in industrial and electronic systems. It operates over a wide ambient range and is supplied in a through-hole TO-220 package for straightforward mounting and heatsinking in control assemblies.
Features and Benefits:
• 500V drain voltage supports high-voltage switching applications
• 8 A continuous drain current enables substantial load drive
• 125W power dissipation allows sustained thermal loading
• 850 mΩ RDS(on) reduces conduction losses under load
• 63 nC typical gate charge offers predictable switching behaviour
• 20V maximum gate-source rating protects the gate from overdrive
• 8 A continuous drain current enables substantial load drive
• 125W power dissipation allows sustained thermal loading
• 850 mΩ RDS(on) reduces conduction losses under load
• 63 nC typical gate charge offers predictable switching behaviour
• 20V maximum gate-source rating protects the gate from overdrive
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor control stages
• Used for load switching in power distribution modules
• Can be used for laboratory high-voltage test rigs
• Suitable for discrete amplifier and converter circuits
• Ideal for industrial motor control stages
• Used for load switching in power distribution modules
• Can be used for laboratory high-voltage test rigs
• Suitable for discrete amplifier and converter circuits
What ambient temperature range can it tolerate in operation?
It operates between -55 °C and 150 °C, allowing use in harsh thermal environments and elevated junction scenarios.
How is it mounted and cooled in a system?
It is supplied in a TO-220AB through-hole package enabling bolted heatsink attachment for efficient thermal management.
What gate drive constraints should designers observe?
Gate drive must remain within ±20V to avoid exceeding the maximum gate-source rating and to preserve device integrity.
How does switching performance relate to gate charge?
The typical 63 nC gate charge gives designers a basis on which to calculate driver current and switching transition times for specified drive voltages.
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