Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3
- N° de stock RS:
- 279-9929
- Référence fabricant:
- SIHR080N60E-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
6,62 €
(TVA exclue)
8,01 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 - 49 | 6,62 € |
| 50 - 99 | 4,98 € |
| 100 - 249 | 4,40 € |
| 250 - 999 | 4,32 € |
| 1000 + | 4,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9929
- Référence fabricant:
- SIHR080N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | 8x8LR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type 8x8LR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Drain Source Voltage, 51A Maximum Continuous Drain Current - SIHR080N60E-T1-GE3
This power MOSFET is a high-voltage switching device designed for demanding industrial electronics and power systems. It operates as an enhancement-mode N-channel transistor tailored for surface-mount installation and delivers robust performance for high-voltage applications while remaining suitable for environments that require compact, board-mounted power components.
Features and Benefits:
• 600V drain capability for high-voltage switching
• 51A continuous current handling for heavy loads
• 0.084Ω low Rds(on) to reduce conduction losses
• 500W power dissipation for thermal headroom
• 63nC typical gate charge for predictable switching behaviour
• 30V gate maximum to accommodate common drive voltages
• 51A continuous current handling for heavy loads
• 0.084Ω low Rds(on) to reduce conduction losses
• 500W power dissipation for thermal headroom
• 63nC typical gate charge for predictable switching behaviour
• 30V gate maximum to accommodate common drive voltages
Applications
• Suitable for industrial motor drive inverter stages
• Ideal for high-voltage power supplies and converters
• Used for DC-DC conversion in automation equipment
• Can be used for switching stages in power management systems
• Used with high-temperature assemblies in harsh environments
• Ideal for high-voltage power supplies and converters
• Used for DC-DC conversion in automation equipment
• Can be used for switching stages in power management systems
• Used with high-temperature assemblies in harsh environments
What temperature range can the device tolerate during operation?
It is rated to function from -55°C up to 150°C, enabling use in systems exposed to wide thermal variations.
How is the device packaged for PCB assembly?
It is supplied in a surface-mount 8x8LR package with eight pins to support Compact PCB layouts and automated placement.
What gate drive considerations should be observed?
The gate must not exceed ±30V
designers should ensure drive circuits limit Vgs within this threshold to prevent gate damage.
How does switching behaviour impact thermal management?
Typical gate charge of 63nC influences switching losses and therefore affects heat generation during high-frequency operation, informing heatsink or PCB copper requirements.
Liens connexes
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