Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3
- N° de stock RS:
- 279-9929
- Référence fabricant:
- SIHR080N60E-T1-GE3
- Fabricant:
- Vishay
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Consulter les options de prix de grosSous-total (1 unité)*
6,62 €
(TVA exclue)
8,01 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 - 49 | 6,62 € |
| 50 - 99 | 4,98 € |
| 100 - 249 | 4,40 € |
| 250 - 999 | 4,32 € |
| 1000 + | 4,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9929
- Référence fabricant:
- SIHR080N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | 8x8LR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type 8x8LR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 51A Maximum Continuous Drain Current - SIHR080N60E-T1-GE3
This power MOSFET is a high-voltage, N‑channel enhancement device designed for demanding power conversion and switching roles in surface‑mount applications. It offers a combination of high blocking voltage, substantial continuous current capability and a gate voltage rating suitable for common drive circuits, making it appropriate for systems that need compact, high‑power switching in constrained layouts.
Features and Benefits:
• 600V blocking capability enables high‑voltage system use
• 51A continuous current supports heavy load handling
• 0.084Ω Rds(on) reduces conduction losses during operation
• 500W power dissipation allows sustained high‑power handling
• 63nC typical gate charge enables predictable switching behaviour
• 30V gate rating protects against excessive gate drive voltages
• 51A continuous current supports heavy load handling
• 0.084Ω Rds(on) reduces conduction losses during operation
• 500W power dissipation allows sustained high‑power handling
• 63nC typical gate charge enables predictable switching behaviour
• 30V gate rating protects against excessive gate drive voltages
Applications
• Suitable for high‑voltage switch‑mode power supplies
• Ideal for industrial motor drive front‑ends
• Used with renewable energy inverter stages
• Can be used for power‑factor correction circuits
• Appropriate for medium‑power welding and induction heating
• Ideal for industrial motor drive front‑ends
• Used with renewable energy inverter stages
• Can be used for power‑factor correction circuits
• Appropriate for medium‑power welding and induction heating
What temperature range can it tolerate in harsh environments?
It operates across -55°C to 150°C, permitting use in wide thermal conditions without derating for moderate‑temperature excursions.
How does the package support compact PCB designs?
The 8‑pin surface‑mount 8x8LR footprint enables dense board placement while providing adequate thermal and electrical connectivity.
What is the forward voltage during conduction and its impact?
Typical forward voltage is 1.2V, which influences on‑state voltage drop and must be considered in thermal and efficiency calculations.
Is this device suitable for automotive specification requirements?
It is not specified as automotive‑grade, so it should not be assumed compliant with automotive‑specific standards for vehicle electronics.
Liens connexes
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