Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR

N° de stock RS:: 279-9928
Référence fabricant:: SIHR080N60E-T1-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR

Sous-total (1 bobine de 3000 unités)*

9 972,00 €

(TVA exclue)

12 066,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 04 décembre 2026

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Unité	Prix par unité	la bobine*
3000 +	3,324 €	9 972,00 €

*Prix donné à titre indicatif

N° de stock RS:: 279-9928
Référence fabricant:: SIHR080N60E-T1-GE3
Fabricant:: Vishay

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Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	51A
	Maximum Drain Source Voltage Vds	600V
	Package Type	8x8LR
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	500W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	63nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	8mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 51A
	Maximum Drain Source Voltage Vds 600V
	Package Type 8x8LR
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 500W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 63nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 8mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHR080N60E-T1-GE3

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 51A Maximum Continuous Drain Current - SIHR080N60E-T1-GE3

This power MOSFET is a high-voltage switching device designed for demanding industrial electronics and power systems. It operates as an enhancement-mode N-channel transistor tailored for surface-mount installation and delivers robust performance for high-voltage applications while remaining suitable for environments that require compact, board-mounted power components.

Features and Benefits:

• 600V drain capability for high-voltage switching
• 51A continuous current handling for heavy loads
• 0.084Ω low Rds(on) to reduce conduction losses
• 500W power dissipation for thermal headroom
• 63nC typical gate charge for predictable switching behaviour
• 30V gate maximum to accommodate common drive voltages

Applications

• Suitable for industrial motor drive inverter stages
• Ideal for high-voltage power supplies and converters
• Used for DC-DC conversion in automation equipment
• Can be used for switching stages in power management systems
• Used with high-temperature assemblies in harsh environments

What temperature range can the device tolerate during operation?

It is rated to function from -55°C up to 150°C, enabling use in systems exposed to wide thermal variations.

How is the device packaged for PCB assembly?

It is supplied in a surface-mount 8x8LR package with eight pins to support Compact PCB layouts and automated placement.

What gate drive considerations should be observed?

The gate must not exceed ±30V

designers should ensure drive circuits limit Vgs within this threshold to prevent gate damage.

How does switching behaviour impact thermal management?

Typical gate charge of 63nC influences switching losses and therefore affects heat generation during high-frequency operation, informing heatsink or PCB copper requirements.