Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3

N° de stock RS:: 279-9928
Référence fabricant:: SIHR080N60E-T1-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3

Sous-total (1 bobine de 3000 unités)*

9 972,00 €

(TVA exclue)

12 066,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 18 janvier 2027

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Unité	Prix par unité	la bobine*
3000 +	3,324 €	9 972,00 €

*Prix donné à titre indicatif

N° de stock RS:: 279-9928
Référence fabricant:: SIHR080N60E-T1-GE3
Fabricant:: Vishay

Spécifications

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Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	51A
	Maximum Drain Source Voltage Vds	600V
	Package Type	8x8LR
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	63nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	500W
	Maximum Operating Temperature	150°C
	Length	8mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 51A
	Maximum Drain Source Voltage Vds 600V
	Package Type 8x8LR
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 63nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 500W
	Maximum Operating Temperature 150°C
	Length 8mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHR080N60E-T1-GE3

Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 51A Maximum Continuous Drain Current - SIHR080N60E-T1-GE3

This power MOSFET is a high-voltage, N‑channel enhancement device designed for demanding power conversion and switching roles in surface‑mount applications. It offers a combination of high blocking voltage, substantial continuous current capability and a gate voltage rating suitable for common drive circuits, making it appropriate for systems that need compact, high‑power switching in constrained layouts.

Features and Benefits:

• 600V blocking capability enables high‑voltage system use
• 51A continuous current supports heavy load handling
• 0.084Ω Rds(on) reduces conduction losses during operation
• 500W power dissipation allows sustained high‑power handling
• 63nC typical gate charge enables predictable switching behaviour
• 30V gate rating protects against excessive gate drive voltages

Applications

• Suitable for high‑voltage switch‑mode power supplies
• Ideal for industrial motor drive front‑ends
• Used with renewable energy inverter stages
• Can be used for power‑factor correction circuits
• Appropriate for medium‑power welding and induction heating

What temperature range can it tolerate in harsh environments?

It operates across -55°C to 150°C, permitting use in wide thermal conditions without derating for moderate‑temperature excursions.

How does the package support compact PCB designs?

The 8‑pin surface‑mount 8x8LR footprint enables dense board placement while providing adequate thermal and electrical connectivity.

What is the forward voltage during conduction and its impact?

Typical forward voltage is 1.2V, which influences on‑state voltage drop and must be considered in thermal and efficiency calculations.

Is this device suitable for automotive specification requirements?

It is not specified as automotive‑grade, so it should not be assumed compliant with automotive‑specific standards for vehicle electronics.