Vishay SIHH Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3
- N° de stock RS:
- 279-9916
- Référence fabricant:
- SIHH155N60EF-T1GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
5,24 €
(TVA exclue)
6,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 - 49 | 5,24 € |
| 50 - 99 | 5,15 € |
| 100 - 249 | 5,10 € |
| 250 - 999 | 4,98 € |
| 1000 + | 4,88 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9916
- Référence fabricant:
- SIHH155N60EF-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHH | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.159Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHH | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.159Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHH Series MOSFET, 600V Drain Source Voltage, 18A Continuous Drain Current - SIHH155N60EF-T1GE3
This MOSFET is a high-voltage N-channel switching transistor designed for surface-mount power applications in industrial systems. It operates as an enhancement-mode device for switching and amplification tasks where elevated drain-source voltage capability and moderate current handling are required. The component is supplied in a Compact PowerPAK package suited to dense assemblies and thermal-management considerations.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching
• 18A continuous drain current supports substantial load currents
• 0.159Ω Rds(on) reduces conduction losses under load
• 156W power dissipation allows high-power operation
• 38nC typical gate charge ensures predictable drive requirements
• 150°C maximum operating temperature tolerates elevated junction loads
• 18A continuous drain current supports substantial load currents
• 0.159Ω Rds(on) reduces conduction losses under load
• 156W power dissipation allows high-power operation
• 38nC typical gate charge ensures predictable drive requirements
• 150°C maximum operating temperature tolerates elevated junction loads
Applications
• Suitable for high-voltage motor-drive switching stages
• Ideal for SMPS primary-side switching in industrial supplies
• Used for AC-DC conversion in power-management modules
• Can be used for inductive-load switching in automation equipment
• Ideal for SMPS primary-side switching in industrial supplies
• Used for AC-DC conversion in power-management modules
• Can be used for inductive-load switching in automation equipment
What are the thermal limits when designing heat-sinking?
The device permits a maximum operating temperature of 150°C and a total power dissipation of 156W
thermal layout should account for package thermal resistance and ensure adequate PCB copper or heatsinking to maintain junction temperature within limits.
What gate drive considerations are required for fast switching?
Typical gate charge is 38nC at the specified gate drive
choose a driver capable of delivering the required charge within the desired switching time while respecting the maximum gate-source voltage of 30V.
How does the device behave under low-temperature extremes?
It is specified for operation down to -55°C, so materials and soldering processes must accommodate thermal cycling across that range.
Are there mounting or pin-count considerations for PCB layout?
The component is a surface-mount PowerPAK with four pins
PCB footprint and thermal vias should be designed to match the package for electrical and thermal performance.
Liens connexes
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