Vishay EF N-Channel Power MOSFET, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60EF-T1GE3

N° de stock RS:: 653-077
Référence fabricant:: SIHR100N60EF-T1GE3
Fabricant:: Vishay

Vishay EF N-Channel Power MOSFET, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60EF-T1GE3

Sous-total (1 bobine de 3000 unités)*

9 684,00 €

(TVA exclue)

11 718,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Dernier stock RS

3 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	la bobine*
3000 +	3,228 €	9 684,00 €

*Prix donné à titre indicatif

N° de stock RS:: 653-077
Référence fabricant:: SIHR100N60EF-T1GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	38A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK
	Series	EF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.108Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	347W
	Maximum Operating Temperature	150°C
	Length	10.42mm
	Standards/Approvals	RoHS
	Width	8mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 38A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK
	Series EF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.108Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 347W
	Maximum Operating Temperature 150°C
	Length 10.42mm
	Standards/Approvals RoHS
	Width 8mm
	Automotive Standard No

Datasheet - SIHR100N60EF-T1GE3

Pays d'origine :: CN

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 38A Maximum Continuous Drain Current - SIHR100N60EF-T1GE3

This power MOSFET is a high-voltage N-channel switch designed for surface-mount power conversion and switching applications. It operates within a broad temperature range suitable for demanding industrial environments and is intended for use where robust drain-source voltage handling and elevated power dissipation are required. The component is supplied in a low-profile PowerPAK package to support Compact board layouts and effective thermal management.

Features and Benefits:

• 600V maximum Vds delivers high-voltage switching capability • 38A continuous drain current enables substantial load handling • 0.108Ω Rds(on) minimises conduction losses at rated current • 347W maximum Pd supports high-power dissipation needs • 35nC typical gate charge aids efficient switching performance

Applications

• Suitable for high-voltage switch-mode power supplies • Ideal for industrial motor drive inverter stages • Used for power factor correction circuits in AC systems • Can be used for DC-DC converters in automation equipment • Suitable for high-voltage switching in power distribution units

What limits should I observe for gate-drive voltage?

The gate-source voltage must not exceed 30V to prevent gate dielectric stress.

How does thermal endurance relate to operating limits?

The device is rated to operate up to 150°C junction temperature, allowing continued operation under elevated thermal conditions with appropriate PCB heat-sinking.

What is the acceptable ambient temperature range for deployment?

It supports operation down to -55°C, making it suitable for low-temperature industrial environments.

How many pins does the package provide for board connection?

The component uses an 8-pin configuration in the PowerPAK surface-mount package.

Is this intended for automotive qualification?

It is not specified as meeting automotive standard approvals.