Vishay EF Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60EF-T1GE3
- N° de stock RS:
- 653-077
- Référence fabricant:
- SIHR100N60EF-T1GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
12 504,00 €
(TVA exclue)
15 129,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 4,168 € | 12 504,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-077
- Référence fabricant:
- SIHR100N60EF-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.108Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 347W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 8 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.108Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 347W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 8 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay 4th generation E Series Power MOSFET equipped with a fast body diode for enhanced switching efficiency. It offers a low figure of merit (FOM), reduced effective capacitance, and minimized switching and conduction losses. Packaged in PowerPAK 8x8LR, it's Ideal for server, telecom, lighting, industrial, and solar power applications.
Pb Free
Halogen free
RoHS compliant
Liens connexes
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