Vishay EF Type N-Channel Single MOSFETs, 31 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60EF-T1GE3
- N° de stock RS:
- 653-081
- Référence fabricant:
- SIHR120N60EF-T1GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
11 085,00 €
(TVA exclue)
13 413,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 3,695 € | 11 085,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-081
- Référence fabricant:
- SIHR120N60EF-T1GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.125Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 8 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.125Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 8 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for improved switching efficiency. It delivers a low figure of merit (FOM), reduced effective capacitance, and minimized switching and conduction losses. Housed in a PowerPAK 8x8LR package, it's Ideal for server, telecom, lighting, industrial, and solar power applications.
Pb Free
Halogen free
RoHS compliant
Liens connexes
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