Vishay EF Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3
- N° de stock RS:
- 279-9909
- Référence fabricant:
- SIHF085N60EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
6,14 €
(TVA exclue)
7,43 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,14 € |
| 10 - 24 | 6,04 € |
| 25 - 99 | 5,90 € |
| 100 + | 5,53 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9909
- Référence fabricant:
- SIHF085N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 35W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 35W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF MOSFET, 600V Drain-Source Voltage, 13A Continuous Drain Current - SIHF085N60EF-GE3
This MOSFET is a high-voltage N-channel transistor designed for power switching in industrial and electronic systems. It is supplied in a through-hole TO-220 package for straightforward mounting and thermal management, and is intended for use where robust voltage handling and substantial current capability are required.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications • 13A continuous drain current supports substantial load currents • 0.084Ω Rds(on) reduces conduction losses under load • 35W power dissipation allows sustained power handling • ±30V gate tolerance permits wide drive voltage margins • 63nC typical gate charge gives predictable switching behaviour
Applications
• Suitable for industrial motor drive switching stages • Ideal for power supplies and high-voltage converters • Used for inverter and UPS power switching modules • Can be used for inductive load control in automation systems
What temperature range can it operate within?
It is rated to operate from -55°C up to a maximum of 150°C, allowing deployment in elevated temperature environments.
How many pins does the component present and what is the mount type?
It has three pins and is configured for through-hole mounting to facilitate secure board attachment and heat-sink interfacing.
What package form and power handling should be expected when fitting a heatsink?
The TO-220 package with 35W maximum power dissipation is suited to heat-sink attachment for improved thermal performance in continuous operation.
Is this device compliant with common environmental restrictions?
It meets RoHS requirements, indicating compliance with specified hazardous substance limits.
How does the gate charge affect switching design?
A typical gate charge of 63nC helps determine driver current requirements and switching transition times for efficient gate-drive design.
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