Vishay SIHF Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-220 SIHF074N65E-GE3
- N° de stock RS:
- 279-9907
- Référence fabricant:
- SIHF074N65E-GE3
- Fabricant:
- Vishay
Offre groupée disponible
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6,80 €
(TVA exclue)
8,23 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 994 unité(s) expédiée(s) à partir du 10 août 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,80 € |
| 10 - 24 | 6,67 € |
| 25 - 99 | 6,53 € |
| 100 + | 6,41 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9907
- Référence fabricant:
- SIHF074N65E-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | SIHF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.079Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series SIHF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.079Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.1mm | ||
Automotive Standard No | ||
Vishay SIHF Series MOSFET, 650V Maximum Drain Source Voltage, 14A Maximum Continuous Drain Current - SIHF074N65E-GE3
This MOSFET is a high-voltage N-channel power transistor designed for through-hole mounting in power-management and switching environments. It operates across an extended temperature range and is intended for applications requiring substantial voltage handling and moderate current capacity while conforming to RoHS restrictions.
Features and Benefits:
• 650V drain rating enables high-voltage switching capabilities
• 14A continuous drain current supports sustained power delivery
• 0.079Ω Rds(on) reduces conduction losses during operation
• 39W power dissipation allows for elevated heat throughput
• 8nC typical gate charge ensures responsive switching behaviour
• 30V gate tolerance permits wide drive voltage margin
• 14A continuous drain current supports sustained power delivery
• 0.079Ω Rds(on) reduces conduction losses during operation
• 39W power dissipation allows for elevated heat throughput
• 8nC typical gate charge ensures responsive switching behaviour
• 30V gate tolerance permits wide drive voltage margin
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive inverter stages
• Used with high-voltage DC-DC converter topologies
• Can be used for renewable energy power conversion
• Suitable for power factor correction front-end circuits
• Ideal for industrial motor drive inverter stages
• Used with high-voltage DC-DC converter topologies
• Can be used for renewable energy power conversion
• Suitable for power factor correction front-end circuits
What thermal extremes can this device tolerate in operation?
It is rated to operate from -55°C up to 150°C allowing use in harsh thermal environments where wide temperature resilience is required.
Which mounting approach is required for installation?
The component utilises a through-hole TO-220 package intended for PCB mounting with a standard heatsinking option for improved thermal management.
How does the gate characteristic affect switching design?
A typical gate charge of 8nC at the specified gate drive level informs gate driver selection to balance switching speed against drive power consumption.
Are there limitations on gate drive voltage to avoid damage?
The device accepts gate-to-source voltages up to 30V, so designs must ensure drive circuits do not exceed this threshold.
Liens connexes
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