Vishay EF Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 SIHF085N60EF-GE3
- N° de stock RS:
- 279-9908
- Référence fabricant:
- SIHF085N60EF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
189,55 €
(TVA exclue)
229,35 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 3,791 € | 189,55 € |
| 100 + | 3,37 € | 168,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 279-9908
- Référence fabricant:
- SIHF085N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 35W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 35W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.1mm | ||
Automotive Standard No | ||
Vishay Series EF MOSFET, 600V Maximum Drain Source Voltage, 13A Maximum Continuous Drain Current - SIHF085N60EF-GE3
This MOSFET is a high-voltage N-channel enhancement device intended for power-switching and control stages in through-hole assemblies. It is designed to handle elevated drain-to-source stresses while operating across a wide temperature span, making it suitable for demanding electronic systems that require robust switching and thermal endurance.
Features and Benefits:
• 600V drain capability enabling high-voltage switching applications
• 13A continuous drain current for sustained power delivery
• 0.084Ω low on-resistance reduces conduction losses
• 35W power dissipation supports moderate thermal loading
• 63nC typical gate charge allows predictable switching behaviour
• Vgs rating ±30V for robust gate-drive tolerances
• 13A continuous drain current for sustained power delivery
• 0.084Ω low on-resistance reduces conduction losses
• 35W power dissipation supports moderate thermal loading
• 63nC typical gate charge allows predictable switching behaviour
• Vgs rating ±30V for robust gate-drive tolerances
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor-drive switching stages
• Used with power supplies requiring through-hole mounting
• Can be used for switch-mode power supplies in industrial equipment
• Suitable for prototype and repair work on legacy power systems
• Ideal for industrial motor-drive switching stages
• Used with power supplies requiring through-hole mounting
• Can be used for switch-mode power supplies in industrial equipment
• Suitable for prototype and repair work on legacy power systems
What mounting style does it require and how does that affect thermal handling?
It uses a TO-220 through-hole package which permits bolting to a heatsink for improved thermal dissipation and straightforward PCB assembly.
What gate-drive considerations are necessary for efficient switching?
Design the driver to supply sufficient charge for the 63nC typical gate charge to achieve desired rise/fall times while avoiding excessive gate stress near the ±30V limit.
How does the device perform across temperature extremes?
It is rated to operate from -55°C up to 150°C, allowing use in environments with significant thermal variation while maintaining electrical characteristics.
What is the forward conduction characteristic relevant to diode conduction paths?
The forward voltage specification is 1.2V, which informs loss calculations when body diode conduction occurs during switching or reverse-current events.
Liens connexes
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