STMicroelectronics Type N-Channel, 25 A, 750 V Enhancement, 4-Pin PowerFLAT (5 x 6) HV SGT65R65AL
- N° de stock RS:
- 275-1317
- Référence fabricant:
- SGT65R65AL
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 275-1317
- Référence fabricant:
- SGT65R65AL
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | PowerFLAT (5 x 6) HV | |
| Mount Type | Surface Mount | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type PowerFLAT (5 x 6) HV | ||
Mount Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
- Pays d'origine :
- CN
The STMicroelectronics e-mode powerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
Liens connexes
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