STMicroelectronics M6 Type N-Channel MOSFET, 11 A, 600 V, 5-Pin PowerFlat HV
- N° de stock RS:
- 203-3438
- Référence fabricant:
- STL19N60M6
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 3000 unités)*
5 391,00 €
(TVA exclue)
6 522,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 01 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 1,797 € | 5 391,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 203-3438
- Référence fabricant:
- STL19N60M6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerFlat HV | |
| Series | M6 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 308mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 90W | |
| Typical Gate Charge Qg @ Vgs | 16.8nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 8.1mm | |
| Length | 8.1mm | |
| Width | 0.95 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerFlat HV | ||
Series M6 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 308mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 90W | ||
Typical Gate Charge Qg @ Vgs 16.8nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 8.1mm | ||
Length 8.1mm | ||
Width 0.95 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics N-channel MDmesh M6 Power MOSFET incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. Previous generation of MDmesh devices through its new M6 technology, is built by STMicroelectronics. This combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Low gate input resistance
100% avalanche tested
Zener-protected
Liens connexes
- STMicroelectronics M6 N-Channel MOSFET 600 V, 5-Pin PowerFLAT 8 x 8 HV STL19N60M6
- STMicroelectronics N-Channel MOSFET Transistor 600 V, 5-Pin PowerFLAT 8 x 8 HV STL26N60DM6
- STMicroelectronics N-Channel MOSFET Transistor 600 V, 5-Pin PowerFLAT 8 x 8 HV STL45N60DM6
- STMicroelectronics MDmesh II N-Channel MOSFET 600 V, 8-Pin PowerFLAT 3.3x3.3 HV STL3NM60N
- STMicroelectronics MDmesh M5 N-Channel MOSFET 600 V, 5-Pin PowerFLAT 8 x 8 HV STL36N55M5
- STMicroelectronics N-Channel MOSFET Transistor 600 V, 8-Pin PowerFLAT 5 x 6 HV STL10N60M6
- STMicroelectronics MDmesh M5 N-Channel MOSFET 710 V, 5-Pin PowerFLAT 8 x 8 HV STL57N65M5
- STMicroelectronics SCTL35N65G2V SiC N-Channel MOSFET 650 V, 5-Pin PowerFLAT 8 x 8 HV SCTL35N65G2V
