Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 700 V Enhancement, 4-Pin PG-VSON-4 IPL65R230C7AUMA1
- N° de stock RS:
- 273-5349
- Référence fabricant:
- IPL65R230C7AUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 3000 unités)*
7 257,00 €
(TVA exclue)
8 781,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 12 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 2,419 € | 7 257,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-5349
- Référence fabricant:
- IPL65R230C7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | PG-VSON-4 | |
| Series | CoolMOS C7 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.23Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 67W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC(J-STD20 andJESD22) | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type PG-VSON-4 | ||
Series CoolMOS C7 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.23Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 67W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC(J-STD20 andJESD22) | ||
Automotive Standard No | ||
The Infineon Power MOSFET constructed with CoolMOS™ revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Halogen free
Better efficiency
Pb free lead plating
High power density
Better control of the gate
Liens connexes
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- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 4-Pin TO-247
- Infineon IPL Type N-Channel MOSFET 700 V Enhancement, 4-Pin PG-VSON-4 IPL65R099C7AUMA1