Infineon IPL Type N-Channel MOSFET, 21 A, 700 V Enhancement, 4-Pin PG-VSON-4
- N° de stock RS:
- 273-2790
- Référence fabricant:
- IPL65R099C7AUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
5,94 €
(TVA exclue)
7,19 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 88 unité(s) expédiée(s) à partir du 19 janvier 2026
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Unité | Prix par unité |
|---|---|
| 1 - 49 | 5,94 € |
| 50 - 99 | 4,61 € |
| 100 - 249 | 4,24 € |
| 250 - 999 | 3,99 € |
| 1000 + | 3,38 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-2790
- Référence fabricant:
- IPL65R099C7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | IPL | |
| Package Type | PG-VSON-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 128W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC (J-STD20 and JESD22) | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series IPL | ||
Package Type PG-VSON-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 128W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC (J-STD20 and JESD22) | ||
The Infineon MOSFET is a 650V CoolMOS C7 series power transistor. CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Pb free plating
RoHS compliant
Lower switching losses
Increase power density
Enabling higher frequency
Halogen free mould compound
Liens connexes
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